发明名称 METHOD FOR TREATING ELECTRIC FIELD RELAXATION LAYER OF ARMATURE COIL
摘要 PROBLEM TO BE SOLVED: To prevent creepage corona discharge and to form a stable electrolytic relaxation layer by precuring a prepreg SiC tape before injecting resin by the vacuum impregnation method. SOLUTION: A semiconductor layer 5 is formed by winding a dry tape that is used by the vacuum pressurization impregnation method on the surface of an insulation layer 4 being formed by winding a mica tape at the outer periphery of a bundle of conductor strand bundle 3. A certain width of a low- resistance corona seal shield layer 5 is lapped, and a prepreg SiC tape is wound around an electrolytic relaxation layer 6 by a length required for relaxing electrolysis for treatment at the coil end part of an armature coil. A cover insulation layer 7 for protecting the electrolytic relaxation layer 6 is provided at the outer periphery of the electrolytic relaxation layer 6, thus preventing injection varnish from entering the electrolytic relaxation layer and manufacturing the armature coil with optimum and stable electrolytic relaxation performance.
申请公布号 JP2000139053(A) 申请公布日期 2000.05.16
申请号 JP19980312885 申请日期 1998.11.04
申请人 HITACHI LTD 发明人 SUZUKI HIROYUKI;SUZUKI KEIJI;FURUKAWA NOBUAKI
分类号 H02K3/40;H02K15/12;(IPC1-7):H02K3/40 主分类号 H02K3/40
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