| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing an FET(field effect transistor) where an LDD(lightly-doped drain) occurrence is dissolved, wherein the channel of the FET is restrained from becoming asymmetrical, and a salicide technology can be easily applied. SOLUTION: This manufacturing method comprises a process, where an insulating film 12 is deposited after a gate electrode 3 is formed, and sidewalls 15 and 16 formed of the above insulating film 12 are each formed on the sides of the gate electrode 3 through anisotropic etching. In this case, the insulation film is deposited after the gate electrode 3 is formed, then anisotropic etching is carried out tilting a substrate 1 at the same angle as the angle of ion implantation carried out for the formation of source/drain regions 5 and 6 to form the sidewalls 15 and 16 so as to be bilaterally asymmetrical, whereby the sidewall 15 is set thicker than the side wall 16.
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