| 摘要 |
PROBLEM TO BE SOLVED: To prevent a metal from obstructed in being silicification due to carbide, even though a resist material is knocked on a polysilicon and injected thereinto to generate the carbide, when injecting ions into the gate-polysilicon through using the resist as a mask in the dual gate process of a salicide structure. SOLUTION: After forming a TEOS oxide film 7 on a polycrystalline silicon film 6 for a dual gate, P-type (N-type), impurities 10 (9) are injected into the polycrystalline silicon film 6, using a resist 8 as a mask. In this case, although a carbide 17 of the resist 8 is generated on the TEOS oxide film 7, when removing this TEOS oxide film 7, the carbide 17 of the resist 8 is also removed, together with the film 7 so as not to leave the carbide 17 of the resist 8 on the polycrystalline silicon film 6. Therefore, even though such a high-melting- point metal as Ti on the polysilicon to subject them to a heat treatment is deposited, the metal is privented from being obstructed in silicification.
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