| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that is capable of operating at a high speed and a manufacturing method thereof, where the semiconductor device can be set uniform in electrical properties and protected against short circuits caused by a bridge in a salicide process. SOLUTION: An insulating layer 2 and an SOI(semiconductor-on-insulator) layer 3 are formed on a silicon substrate 1 for the formation of an SOI substrate, where a channel region 19, LDD(lightly-doped drain) regions 15a, and source/drain junction regions 17 and 18 are formed on the SOI layer 3. A gate electrode 14, whose sidewalls are nearly vertical to the SOI substrate, is formed on the cannel region 19 through the intermediary of a gate-insulating film. A oxide film spacer 16 is formed on each sidewall of the gate electrode 14 and the LDD regions 15a. The source/drain junction regions 17 and 18 are thicker than that of the channel region 19, and the thicknesses of the LDD regions 15a change so as to have each gradually, continuously increase starting from the channel region 19 toward the source junction region 17 and the drain junction region 18.
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