发明名称 ION IMPLANTER AND ION IMPLANTING METHOD
摘要 PROBLEM TO BE SOLVED: To form a dose region of a plurality of species on one wafer in a one time ion implantation process without masking, etc., in an ion implanter and an ion implanting method. SOLUTION: A wafer supporting wheel 20 of an ion implanter 10 is rotated by a first drive motor 34, and is also shaken by a second drive motor 36. A controller 42 has previously stored a plurality of controlling shake speed modes in which one of two basic shake speed modes is switched to the other at an intermediate position in the range of shaking of the wafer supporting wheel 20, and controls the second drive motor 36 in accordance with the controlling shake speed mode which is selectively inputted by an input device 40. Thus, if the wafer supporting wheel 20 is shaken within the scope of shaking, two different dose regions are formed in response to the two basic shake speed modes in each wafer W.
申请公布号 JP2000138179(A) 申请公布日期 2000.05.16
申请号 JP19980310665 申请日期 1998.10.30
申请人 APPLIED MATERIALS INC 发明人 FUJIKI YOSHIHIKO;MIURA RYUICHI;MATSUNAGA YASUHIKO
分类号 C23C14/48;H01J37/317;H01L21/00;H01L21/265;(IPC1-7):H01L21/265 主分类号 C23C14/48
代理机构 代理人
主权项
地址