| 摘要 |
PROBLEM TO BE SOLVED: To restrict an increase in parasitic resistance attributed to contact resistance with a source/drain diffused layer source/drain wiring in the case where devices are further integrated. SOLUTION: There is formed a source/drain wire 10SD which is formed on a bottom face and side face of a connection hole 8a and contacts with a source/ drain diffused layer, via a silicon film 9 of polycrystal to which impurities are annexed. As a conductive film containing a metal is connected to a diffused layer formed on a substrate surface via a semiconductor layer formed on the bottom face and side face of the connection hole 8a, an interface area between the semiconductor layer and the conductive film increases. As the results, contact resistance between the diffused layer and the conductive film decreases, and in the case where elements are further integrated, it is possible to restrict an increase in parasitic resistance attributed to the contact resistance between the diffused layer and the conductive film.
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