| 摘要 |
PROBLEM TO BE SOLVED: To provide a power device which does not raise problems related to threshold voltage, even if a normal insulating material is used for forming an insulating spacer and will not raise strain causing dislocations or cracks in silicon, even if another material such as silicon nitride is used. SOLUTION: This power semiconductor device has a second insulating material region 10 positioned at a side part of a polysilicon layer 5 and a first insulating material region 6, and at the upper side of a region 14 positioned near the opening at the upper side of an insulation layer body region 2 of a gate oxide layer 4, an oxide region 9 formed between a polysilicon region 5 and the second insulating material region 10, and an oxide spacer 8 formed in the upper side of a second material region.
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