发明名称 SEMICONDUCTOR LASER
摘要 PROBLEM TO BE SOLVED: To constitute a guide mode of a surface plasmon propagated along a light guide interface by forming the interface between the materials having permittivity of opposite signs in a clad area. SOLUTION: A long-wavelength semiconductor laser 10 is composed of an active area 12 and at least one guide interface 14. The interface 14 is based on a surface plasmon. The interface 14 is formed of a pair of layers 14.1 and 14.2 having permittivity of opposite signs. For example, the layer 14.1 is formed of a semiconductor having a positive permittivity and the layer 14.2 is formed of a metal having a negative permittivity. The guide mode in the active area 12 is supported at least partly by an electromagnetic surface wave (surface plasmon) at the metal-semiconductor interface 14. Since the amplification of light waves exponentially decreases in two directions perpendicular to the interface 14, no additional clad layer is required.
申请公布号 JP2000138420(A) 申请公布日期 2000.05.16
申请号 JP19990212626 申请日期 1999.07.27
申请人 LUCENT TECHNOL INC 发明人 CAPASSO FEDERICO;CHO ALFRED Y;GMACHL CLAIRE F;HUTCHINSON ALBERT LEE;SIVCO DEBORAH LEE;FAIST JEROME;SIRTORI CARLO
分类号 H01S5/00;H01S5/042;H01S5/10;H01S5/323;H01S5/34;H01S5/343;(IPC1-7):H01S5/343 主分类号 H01S5/00
代理机构 代理人
主权项
地址