| 摘要 |
PROBLEM TO BE SOLVED: To enable to realize simultaneously a lowered parasitic capacitance and leakage current among electrodes by forming a dielectric film to be a partial substrate of a base electrode in a manner in which selectively coating from an end face is made to an outside of a base-mesa. SOLUTION: A pattern for forming a base region is formed on a surface deposited by SiO2 film 80 with a photoresist 81, the SiO2 film 80 is etched with an RIE system, and a base region is formed with a part of a base layer 64, and a collector layer 63 etched. After the SiO2 film 80 is side etched, a SiO film 71 is vapor deposited from an oblique direction of max. 10 degrees from a normal line. The end of the base mesa and the end of the SiO film 71 are deposited in one point. A base electrode pattern is formed by a photoresist 82, the SiO2 film 80 is etched, and a base electrode 68 is formed with an electrode metal deposited and lifted off. The electrode can be formed on a dielectric film without itself being made to contact an ion implantation region.
|
