| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device where a reverse leakage current is restrained from increasing at a P-N junction, when a reverse bias voltage is applied to the P-N junction. SOLUTION: This semiconductor device is equipped with a first conductivity- type semiconductor substrate 1 prescribed in impurity concentration, a first conductivity-type first region 1a which is higher than the prescribed impurity concentration and provided to the primary surface of the semiconductor substrate 1, a second conductivity-type second region 1b which is provided to the primary surface of the semiconductor substrate 1, an insulating film 2 provided on the primary surface of the substrate 1, a first conductive film 3 formed on the insulating film 2 coming partially into contact with the first region 1a, a second conductive film 4 formed on the insulation film 2 coming partially into contact with the second region 1b, and third conductive film 5 which are formed on the insulating film 2, between the first conductive film 3 and the second conductive film 4. |
