发明名称 ELECTRIC CHARGE TRANSFER DEVICE
摘要 PROBLEM TO BE SOLVED: To provide an electric charge transfer device which is capable of dispensing with a negative power supply, overlapping output signal in a P-type high-concentration region around an output part, and can be improved in conversion efficiency. SOLUTION: An electric charge transfer device has a structure, where P-type semiconductor well regions of CCD registers 33 and 34 and an output 36 are formed as being connected together, P-type high-concentration regions 56 and 57 are provided in the P-type semiconductor well regions, the P-type high- concentration region 56 around the CCD registers, and the P-type high- concentration region 57 around the output are connected together through the intermediary of an isolation region (e.g., a P-type low-concentration region 58 or a depression-type P-channel MOS transistor, where a horizontal output gate electrode is used), a low voltage (0 V) is applied to the P-type high- concentration region 56 around the output, and a high voltage (positive voltage) is applied to the P-type high-concentration region 57 around the CCD registers.
申请公布号 JP2000138367(A) 申请公布日期 2000.05.16
申请号 JP19980312328 申请日期 1998.11.02
申请人 SONY CORP 发明人 HIROTA ISAO
分类号 H01L21/339;H01L27/148;H01L29/762;H04N5/335;H04N5/341;H04N5/369;H04N5/3722;H04N5/3728;(IPC1-7):H01L29/762 主分类号 H01L21/339
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