| 摘要 |
PROBLEM TO BE SOLVED: To leave a first photoresist film in a ridge area when an opening is formed in a prescribed pattern by exposing and developing a second photoresist film, by forming a photoresist film having different fusibility from that the first photoresist film has as the second photoresist film. SOLUTION: After a first photoresist film 24 is formed on an insulating film 23 formed on a substrate 20, a second photoresist film 25 is formed on the whole surface of the film 24. Then a mask 25 is formed in a prescribed pattern having an opening 26 for exposing the first photoresist film 24 on a ridge 22 by exposing and developing the second photoresist film 25. The first and second photoresist films 24 and 25 are respectively formed of negative- and positive-type resists. In developing the second photoresist film 25, therefore, the first photoresist film 24 is not dissolved by the developing solution, but is left with a film thickness which is nearly equal to that when deposited.
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