PRODUCTION OF PHOTORESIST PATTERN AND PRODUCTION OF SEMICONDUCTOR DEVICE USING THAT

摘要

PROBLEM TO BE SOLVED: To provide a producing method of a photoresist pattern which regulates the opening part of a small critical dimension and to provide a producing method of semiconductor device by the method above described. SOLUTION: A photoresist pattern 120A which regulates the opening part is formed by using a photoresist compsn. containing a polymer mixture as the essential component. The polymer mixture consists of a polymer (A) having malonic acid ester groups which causes chemical reaction with an acid and which is bonded to the skeleton of the polymer and a polymer (B) having bonded groups which are thermally decomposed at a temp. lower than the glass transition temp. of the polymer to increase the intermolecular interaction, or consists of the polymer (B) having bonded groups which are thermally decomposed at a temp. lower than the glass transition temp. of the polymer and a polymer (C) containing (meth)acrylates as monomers which cause chemical reaction with an acid. Then the photoresist pattern 120B is fluidized by heat treatment to shrink the opening part. Since the photoresist compsn. used consists of a polymer mixture having a large contrast and easily controllable fluidity, the photoresist pattern 120C which regulates the opening part with a small critical dimension can be formed.