| 摘要 |
PROBLEM TO BE SOLVED: To evaluate and manage the dependence on processing quantity or the difference among devices by subjecting a semiconductor substrate to heating and temperature raising process, measuring a gas which is desorbed from the semiconductor substrate and comparing the measurements with previously measured desorption characteristics, thereby calibrating the temperature of the semiconductor substrate. SOLUTION: Active gas species Ar ions which are different from a silicon substrate implanted into a metal are restricted by lattice defects introduced, when the Ar ions are implanted and are discharged to the outside of a solid during a process for recovering from defects generated during heating process. A complex of a plurality of inert gas species and point defect is formed in the solid, and desorption of inert gas is recognized at different temperature due to the difference of activation energy required for extinction thereof. The temperature of a silicon substrate can be calibrated from the desorption characteristics of a gas species Ar which are desorbed, when the silicon substrate is heated under vacuum by measuring the time to be elapsed after the process set temperature or the start of heating before desorption.
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