| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve the ohmic property with an n-type diffused layer of a grid electrode, and also relieve the imitation of baking atmosphere for baking an electrode, by making the electrode on the side of light receiving face of Ag paste material including Ti or its compound and a group V element in the periodic table or its compound. SOLUTION: N-type impurities are diffused to one main surface of a p-type silicon single crystalline semiconductor substrate 1 so as to form an n-type diffused layer 2, and it is made a light receiving face. Then, Ag paste where Ti about severalμm in grain diameter and P2O5 are added and mixed by about 10-12% is printed by screen on this n-type diffused layer 2 so as to form a grid electrode 3a. It will do to use its compound in place of Ti, and also it will do to use P and As as group V element in periodic table. In a solar cell of this constitution, the voltage drop of bias in forward direction becomes sharply small. Besides, this solar cell can sharply improve the ohmic property of the grid electrode 3a.</p> |
