| 摘要 |
PROBLEM TO BE SOLVED: To permit faster dissolution for development and uniform development as well as prevent pattern collapse during rinsing and swelling of a high- molecular thin film during drying. SOLUTION: A resist film 2 on a substrate 1 in a reaction chamber is exposed. The resist film 2 is exposed to high pressure supercritical carbon dioxide 5 added with a dissolution promoting agent to perform development. The exposed portion 3 of the resist film 2 is removed. The substrate 1 is rinsed by being exposed to low pressure supercritical carbon dioxide. In this state, low pressure supercritical carbon dioxide 6 is discharged from the reaction chamber and drying is performed with a pressure in the reaction chamber that is the same as atmosphere. |
