METHOD FOR FORMING THIN FILM AND MANUFACTURE OF SEMICONDUCTOR LIGHT-EMITTING ELEMENT

摘要

PROBLEM TO BE SOLVED: To surely form a thin film of stable deposition speed and high adhesive strength using an ECR sputter method. SOLUTION: With an Si target material 23 used as a target for an ECR sputter device, argon gas of flow rate 30 cc/min and an oxygen gas of flow rate 4.5 cc/min which is less than at deposition are introduced in a thin-film deposition chamber 22 for generating an ECR plasma. Then the supply amount of oxygen gas is increased to a prescribed amount of 6.5 cc/min to satisfy the conditions for depositing a thin film, then a thin film 27 of SiO2 is deposited on the surface of a sample 21.