发明名称 SEMICONDUCTOR SURGE ABSORBER
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor surge absorber which prevents the occurrence of a dynamic current by breaking itself in an opened state when the element absorbs a surge current. SOLUTION: In a semiconductor surge absorber in which a silicon chip 1 incorporated with a surface absorbing circuit and a copper lead frame 2 holding the chip 1 are connected through a wire 5 made of Al, Au, etc., and molded with an epoxy or polyimide molding resin 6, a wire having a surge current resistance which is smaller than that of the chip 1 is used as the wire 5 and the resin 6 is coated with a rubber film 7.
申请公布号 JP2000138107(A) 申请公布日期 2000.05.16
申请号 JP19980313063 申请日期 1998.11.04
申请人 MITSUBISHI MATERIALS CORP 发明人 INABA HITOSHI
分类号 H01C7/12;H01L23/58;(IPC1-7):H01C7/12 主分类号 H01C7/12
代理机构 代理人
主权项
地址