| 发明名称 |
Planar trenches |
| 摘要 |
Method for improving the topography over trench structures in which the provision of extra poly-semiconductor material e.g. polysilicon or nitrate or oxide in the regions of the trench edges and, if necessary, the subsequent oxidation of the extra material prevents the occurrence of regions of high mechanical stress.
|
| 申请公布号 |
US6063693(A) |
申请公布日期 |
2000.05.16 |
| 申请号 |
US19980045638 |
申请日期 |
1998.03.23 |
| 申请人 |
TELEFONAKTIEBOLAGET LM ERICSSON |
发明人 |
SOEDERBAERG, ANDERS;OEGREN, NILS;SJOEDIN, HAAKAN;ZACKRISSON, MIKAEL |
| 分类号 |
H01L21/762;H01L21/763;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/762 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
