发明名称 |
Gallium nitride-based compound semiconductor device |
摘要 |
Disclosed is a gallium nitride-based compound semiconductor device, including a laminate film consisting of a plurality of layers stacked one upon the other to form a pn-junction and formed of InGaAlN. The semiconductor device also includes an n-side electrode and a p-side electrode to supply current to the pn-junction. Further included is a heat generation structure formed within the laminate film. The heat generation structure includes a low resistivity portion having a relatively low resistivity and a high resistivity portion having a relatively high resistivity and positioned adjacent to the low resistivity portion. The low resistivity portion and the high resistivity portion are formed within a single layer, differ from each other in carrier concentration, and formed by introducing an impurity into the single layer in a different dose such that the low resistivity portion is positioned closer to the p-side electrode than the high resistivity portion.
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申请公布号 |
US6064079(A) |
申请公布日期 |
2000.05.16 |
申请号 |
US19980115239 |
申请日期 |
1998.07.14 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
YAMAMOTO, MASAHIRO;NUNOUE, SHINYA;SASANUMA, KATSUNOBU;ISHIKAWA, MASAYUKI |
分类号 |
H01L33/06;H01L33/32;H01S5/00;H01S5/042;H01S5/30;H01S5/323;H01S5/343;(IPC1-7):H01L33/00;H01S3/19 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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