| 摘要 |
PURPOSE: An FRAM(ferroelectric random access memory) fabrication method is provided to prevent a degradation of ferroelectric layer by forming SRO((Sr1-x, Cux)RuO3) film between an upper electrode and an adhesive layer. CONSTITUTION: An SBT(SrBi2Ta2O9) is used as a ferroelectric layer(16) of capacitor. After forming an upper electrode(18) on the SBT layer(16), an SRO film(20) having high adhesive force and high conductance is formed on the upper electrode(18). An adhesive layer(24) of Ti and a barrier layer(26) of TiN are formed on the SRO film(20). After forming a metal film(28) of Al, alloying process is performed to the resultant structure. Thereby, the stacked Ti/TiN components are not diffused into the upper electrode(18) and the SBT ferroelectric layer(16).
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