METHOD FOR FORMING A CAPACITOR OF SEMICONDUCTOR DEVICES

摘要

PURPOSE: A capacitor formation method is provided to simplify manufacturing process and improve processing margin by forming a flattening layer after a bit line formation. CONSTITUTION: A lower insulator(5) having a bit line contact plug(20) and a capacitor contact plug(6) is formed on a silicon substrate(1). Previously, a bit line(8) connected to the bit line contact plug(20) is formed. Then, a flattening insulator(10) is formed on the resultant structure, wherein the height of the deposited flattening insulator(10) is same to the height of the bit line(8). Thereby, step coverage is improved. By etching a first and a second conductive layers(13,16) using the flattening insulator(10) as a mask, a storage electrode made of the conductive layers(13,16) is formed to connected to the capacitor contact plug(6).