| 摘要 |
PURPOSE: A method is provided to enhance the characteristics and reliability of a device with inspection and prevention of a process accident by inspecting whether a process is normal or abnormal through a comparison of values. CONSTITUTION: Plural n+ source/drain regions(19, 21, 23, 25) are formed with implanting n+impurity by using a n+ implant mask on the upper portion of a semiconductor substrate having an n well(13) and a p well(15). Plural p+ source/drain regions(31, 33, 35) are formed with implanting p+ impurity by using a p+ implant mask on the upper portion of the semiconductor substrate. The n+ source/drain regions(19, 21, 23, 25) on the p well(15) has the characteristics of an NPN bipolar device, and p+ source/drain regions(31, 33, 35) on the n well(13) has the characteristics of a PNP bipolar device.
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