| 摘要 |
PURPOSE: A semiconductor device fabrication method is provided to prevent a punch-through between isolating regions and a segregation of dopants by sloped etching a nitride layer. CONSTITUTION: A pad oxide and a nitride layer(3) are sequentially deposited on a semiconductor substrate(1), wherein the nitride layer(3) used as a mask of trench etching. The nitride layer(3) is slopely etched in order to form mesa structure using a photoresist pattern as a mask. Using the mesa-shaped nitride layer(3) as a mask, the exposed semiconductor substrate(1) is etched, thereby forming a trench. An oxide layer(6) is deposited in the trench to reduce a stress. Then, dopants are implanted to the resultant structure.
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