METHOD FOR FORMING STORAGE ELECTRODE OF SEMICONDUCTOR DEVICES

摘要

PURPOSE: A storage electrode formation method is provided to improve process margin by removing a step between a peripheral region and a cell region using a core oxide. CONSTITUTION: An interlayer dielectric(13) having a storage contact hole is formed on a semiconductor substrate(11) defined by a peripheral region and a cell region. A conductive layer is formed on the interlayer dielectric(13) to filled into the contact hole. A core oxide(17) is formed on entire surface of the resultant structure and etched using a photoresist pattern as a mask. A storage electrode side walls (19) is formed at both side walls and connected to the conductive layer.