METHOD FOR FORMING TEST PATTERN OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a test pattern of a semiconductor device is provided to test a contact chain resistance characteristic between a bit line and a plug. CONSTITUTION: A method for forming a test pattern of a semiconductor device comprises the steps of: forming a first insulation layer(24) on a semiconductor substrate(21) having an isolation layer in a selected region; exposing the semiconductor region by etching the selected region of the first insulation layer; forming a first polysilicon layer(26) in the exposed portion of the semiconductor substrate by etching the first insulation layer; exposing the selected two portions of the first polysilicon layer by forming and patterning a second insulation layer(27) on the entire structure; and exposing a selected region of the second insulation layer to expose the selected two portions of the first polysilicon layer by forming and patterning the second polysilicon layer(28) on the entire structure.