METHOD FOR MANUFACTURING CAPACITOR USING SUPPLEMENTARY LAYER

摘要

PURPOSE: A method for manufacturing a capacitor using a supplementary layer is provided to prevent a non-standard crystallization of a PZT(Pb(Zr,Ti)O3) layer by using a supplementary layer. CONSTITUTION: A method for manufacturing a capacitor using a supplementary layer comprises the steps of: forming an interlayer dielectrics(42) on a substrate(40); forming a contact hole(44) on the interlayer dielectrics; filling a conductive plug to the contact hole; forming a first conductive layer(48) on the interlayer dielectrics comprising the conductive plug; forming a first dielectric layer(50) on the first conductive layer; forming a second dielectric layer as a supplementary layer(52) on the first dielectric layer; and forming a second conductive layer(54) on the second dielectric layer.