LOAD RESISTANCE ELEMENT OF SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THEREOF

摘要

PURPOSE: A load resistance element of semiconductor device and a method for manufacturing thereof are provided to control the length and load resistance, thereby enhancing reliability. CONSTITUTION: A load resistance element of semiconductor device comprises a transistor, an insulating layer pattern, an interlayer dielectrics pattern, and a first load resistance layer(510). The transistor establishes a contact electrode area on a semiconductor substrate. The insulating layer pattern covers the transistor and exposes the contact electrode area. The interlayer dielectrics layer pattern covers the insulating layer pattern and exposes the contact electrode area. The first load resistance layer is formed on the interlayer dielectrics pattern to cover the side wall, and connected to the contact electrode area. The interlayer dielectrics pattern further comprises a contact hole exposing the insulating layer pattern.