| 摘要 |
PURPOSE: A control circuit of a semiconductor memory device is provided to reduce current consumption when writing operation is performed by using a pulse. CONSTITUTION: The control circuit includes an address transition detecting portion(100), a dummy bit line(200), a logic unit, a pulse generating portion(300), a sense enable signal generating portion(400), a write signal generating portion(500) and an enable signal generating portion(600). The address transition detecting portion detects the transition of an address signal inputted from the outside and outputs a precharging signal. The dummy bit line inputs the precharging signal together with a word line enabling signal. The logic unit the precharging signal together with a write signal. A signal from the logic unit is inputted to the pulse generating portion and the pulse generating portion generates a pulse signal. An output signal of the dummy bit line, the precharging signal and the pulse signal are inputted to the sense enable signal generating portion and the sense enable signal generating portion outputs a sense enabling signal. A signal transmitted from the sense enable signal generating portion, a signal from the logic unit and the pulse signal are inputted to the write signal generating portion, and the write signal generating portion outputs a write signal. The precharging signal, the sense enabling signal and the pulse signal are inputted to the enable signal generating portion, and the enable signal generating portion outputs an X-decoder enabling signal.
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