METAL WIRE PATTERN FOR SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

摘要

PURPOSE: A metal wire pattern for a semiconductor device and a method for forming the same are provided to improve reliability of the metal wire pattern by covering a periphery of a wire pattern using a polluted nitride titanium presented on a surface of a titanium target. CONSTITUTION: A metal wire pattern for a semiconductor device includes first and second sacrifice layers. The semiconductor device includes a silicon substrate(100) on which a multi-layer having an insulating layer(102), a bonding layer(104), a diffusion barrier(106), a metal conductive layer(110), a metal bonding layer(112) and an anti-reflective layer(114), which are layered in this order. The first sacrifice layer is formed of a thin nitride titanium between the diffusion barrier(106) and the metal conductive layer. The second sacrifice layer is also formed of a thin nitride titanium deposited on a top and side of the multiple-layer. The first and second sacrifice layers are formed of an intermetallic compound(118) enclosing the metal conductive layer together with the metal bonding layer through a heat-treat process.