ELECTROSTATIC DISCHARGE CIRCUIT

摘要

PURPOSE: An ESD(electrostatic discharge) circuit is provided to improve a performance of electrostatic discharging by occurring a fast snapback using a field transistor. CONSTITUTION: A semiconductor substrate is defined by a field oxide(12) to an active region and a field region. An NMOS transistor(20) comprises a first gate(13a) formed on the active region and a first contact part(14a) formed at both sides of the first gate. A field transistor(30) includes a second gate(13b) formed on the field region and a second contact part(14b) formed at both sides of the second gate(13b). The first gate(13a) and the second gate(13b) are connected to an internal circuit(16) through a first wire(17), and the first contact part(14a) and the second contact part(14b) are connected to a pad(15) via a second wire(18).