METHOD FOR FORMING FIELD OXIDE LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a field oxide layer of a semiconductor device is provided to form a field oxide layer having a flat surface by compensating a hollow portion of the field oxide layer. CONSTITUTION: A method for forming a field oxide layer of a semiconductor device comprises the steps of: forming an oxide blocking pattern to expose an isolation area on a semiconductor substrate(11); forming an oxide blocking spacer on a side wall of the oxide blocking pattern; forming a field oxide layer; removing the oxide blocking pattern and the oxide blocking spacer; depositing an amorphous silicon layer on an upper portion of the semiconductor substrate and the field oxide layer; forming an oxide layer by oxidizing the amorphous silicon layer; and removing selectively the oxide layer and flattening a surface of the field oxide layer.