发明名称 SEMICONDUCTOR DEVICE HAVING CINDUCTIVE PLUG AND METHOD FOR MANUFACTURING THE SAME
摘要 PURPOSE: A semiconductor device and method for manufacturing the same are provided to prevent an electro-migration and localized current crowding by using a conductive plug having a spacer. CONSTITUTION: An interlayer dielectric(42) and an upper conductive layer(54) are sequentially formed on a lower conductive layer(40). A via hole(48) is formed in the interlayer dielectric(42) between the lower and upper conductive layers(40,54). A conductive plug(50) for connecting the upper and lower conductive layers(54,40) is formed in the via hole(48). The conductive plug(50) has protrusion part. The semiconductor device further includes a spacer(52a) formed at both sides of the protrusion part of the conductive plug(50).
申请公布号 KR20000026361(A) 申请公布日期 2000.05.15
申请号 KR19980043869 申请日期 1998.10.20
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, JIN HO;KIM, YOUNG OK
分类号 H01L21/28;(IPC1-7):H01L21/28 主分类号 H01L21/28
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