发明名称 |
SEMICONDUCTOR DEVICE HAVING CINDUCTIVE PLUG AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
PURPOSE: A semiconductor device and method for manufacturing the same are provided to prevent an electro-migration and localized current crowding by using a conductive plug having a spacer. CONSTITUTION: An interlayer dielectric(42) and an upper conductive layer(54) are sequentially formed on a lower conductive layer(40). A via hole(48) is formed in the interlayer dielectric(42) between the lower and upper conductive layers(40,54). A conductive plug(50) for connecting the upper and lower conductive layers(54,40) is formed in the via hole(48). The conductive plug(50) has protrusion part. The semiconductor device further includes a spacer(52a) formed at both sides of the protrusion part of the conductive plug(50).
|
申请公布号 |
KR20000026361(A) |
申请公布日期 |
2000.05.15 |
申请号 |
KR19980043869 |
申请日期 |
1998.10.20 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, JIN HO;KIM, YOUNG OK |
分类号 |
H01L21/28;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|