METHOD FOR FORMING METAL WIRES OF SEMICONDUCTOR DEVICES

摘要

PURPOSE: A metal wire formation method is provided to simplify manufacturing process and improve a yield by simultaneously forming the metal wire and a contact hole using a liquefied oxide layer. CONSTITUTION: An oxide layer for isolating between conductive layers(23) is formed on a lower layer(21). By etching the oxide layer, an oxide pattern(26) having a contact hole is formed, and then a photoresist pattern is formed to fill the contact hole. By performing oxidation process, a liquefied oxide layer(29) is grown only on the oxide pattern(26). After removing the photoresist pattern, a barrier metal and a metal wire is formed.