| 摘要 |
PURPOSE: A sub word line driver is provided to simplify the structure, and to reserve the margin of layout by removing NMOS preventing current leakage. CONSTITUTION: A substrate bias voltage(Vbb) is supplied to an input line(1). A first PMOS component(3) and a first NMOS component(4), of which the gates are connected to the input line(1) common and the output terminal is connected to a first word line(2), are mutually connected between a word line boosting terminal(Vpp) and a grounding voltage terminal(Vss), and selects the first word line(2) by being controlled by the substrate bias voltage(Vbb). A second PMOS component(6) and a second NMOS component(7), of which the gates are connected to the input line(1) common and the output terminal is connected to the second word line(9), are mutually connected between the word line boosting terminal(Vpp) and the grounding voltage terminal(Vss) and do not select the second word line(9) by being controlled by the substrate bias voltage(Vbb) when the first word line(2) is selected.
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