METHOD FOR FORMING CAPACITOR OF SEMICONDUCTOR DEVICES

摘要

PURPOSE: A cylindrical capacitor formation method having double side walls is provided to enhance surface area of capacitor and prevent a bridge by dividing upper portion of the double side walls using CMP(chemical mechanical polishing). CONSTITUTION: A first interlayer dielectric(25) is formed on a semiconductor substrate(20) having transistors. After etching a portion of the first interlayer dielectric(25), a first conductive layer and a second interlayer dielectric(27) are sequentially formed. Then, by etching the second interlayer dielectric(27), spacers are formed at side walls of the first conductive layer(25). After forming a storage contact hole, a second conductive layer is filled into the contact hole. After forming a third interlayer dielectric on the resultant structure, the third interlayer dielectric, the second and the first conductive layers are removed by using CMP, thereby forming double storage electrode side walls.