METHOD FOR FORMING CONTACT HOLE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming contact holes of a semiconductor device is provided to obtain a process margin and a process stability by minimizing attack of an upper gate corner by a nitride spacer on the upper gate corner which is weakened during a lower insulating oxide layer etching process. CONSTITUTION: In a method for forming contact holes of a semiconductor device, a gate electrode is first formed on a semiconductor substrate(11), then an oxide layer(14) is formed on the semiconductor substrate(11) while covering the gate electrode(12). The oxide layer(14) is etched such that a portion of a side wall of the gate electrode(12) is exposed. Next, a nitride layer(13) is formed to cover all the layers, after which the nitride layer is etched such that a nitride spacer can be formed on the side wall of the gate electrode. The oxide layer is dry-etched using the nitride spacer as a mask. Finally, after an interlayer dielectric layer is formed on the substrate, contact holes are formed by etching the interlayer dielectric layer.