METAL WIRING METHOD OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of forming a metal interconnect is to prevent diffusion of vacancies causing a short-circuit of the metal interconnect, thereby improving reliability of electromigration and stress migration. CONSTITUTION: The first metal layer(21) composed of an aluminum layer is formed on a semiconductor substrate. An insulating layer(22) is formed on the first metal layer and then selectively etched to form a via hole(23) exposing the metal layer. A titanium layer(24) is deposited on the entire structure at such a high temperature to obtain an aluminum deposit(25). The obtained aluminum deposit reacts with the titanium layer and then TiAl3 is formed at an interface thereof. A second metal layer(26) is then formed continuously on the titanium layer not to form an oxide thereon.