METHOD OF FORMING CONTACT HOLE

摘要

PURPOSE: A method for forming a contact hole is to simplify the number of processes and to improve a design margin. CONSTITUTION: A field oxide layer(2), a gate oxide layer(3), and a polysilicon layer(4) are deposited on a silicon substrate(1), and are selectively etched to form a word line pattern. An insulating layer(10) having a high etching selectivity is deposited on the entire surface of the substrate, and is selectively etched to form a spacer insulating layer on a sidewall of the word line pattern. An insulating layer(100) having a high etching selectivity is formed on the entire surface of the substrate, and is planarized with a planarizing layer(6). After a polysilicon layer(7) is deposited on the entire surface of the substrate to function as a contact mask, the polysilicon layer is selectively etched to expose the planarizing layer. A metallic oxide film(20) is formed on the entire surface of the substrate in such a way that an edge thereof is sharpened, and is annealed.