| 摘要 |
PURPOSE: A method for forming protective film of TFT LCD is provided to be structurally compacted by forming a SiN film under deposition pressure in which the coupling ratios between silicon and hydrogen and nitrogen and hydrogen become similar, thereby uniformly sustain the thickness of the SiN film in no relation to under topology, and to enhance electric characteristics and reliability. CONSTITUTION: A method for forming protective film of TFT LCD consists of forming a protective film(12) of SiN material on the front surface of a glass substrate with a deposition method. The conditions of the deposition is as follows. The deposition time; 51 seconds, RF power; about 1600W, the gap between electrodes; about 750 mils, N2 gas; about 3,500 sccm, NH3 gas; about 2,800 sccm, SiH4 gas; about 350 sccm.
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