METHOD FOR MANUFACTURING SPLIT-GATE TYPE FLASH MEMORY CELL

摘要

PURPOSE: A method for manufacturing flash memory cell is provided to increase coupling ratio by increasing contact area between a floating gate and a control gate. CONSTITUTION: A method for manufacturing split-gate type flash memory cell comprises steps of: sequentially forming a tunnel oxide film(20), and a polysilicon layer(30) for a floating gate; forming a polysilicon pattern; etching a selected region of an exposed field oxide film; forming a dielectric film(50) and a polysilicon layer(60) for a control gate; forming a control gate and a floating gate; and forming a select gate oxide film(90) and a select gate after forming source and drain. The control gate and the floating gate are formed by selectively etching selected regions of the polysilicon layer for the control gate, the dielectric film, the polysilicon layer for the floating gate and the tunnel oxide film.