发明名称 |
CIRCUIT FOR GENERATING MULTI-STEP PULSE IN FLASH MEMORY DEVICE |
摘要 |
PURPOSE: A circuit for generating multi-step pulse in a flash memory device is provided to m a size of a device and to improve a response speed by generating a multi-step pulse using only a simple device. CONSTITUTION: A positive charge pump circuit(20) generates a stable high potential. A diode chain(21) descends a high potential generated in the positive charge pump circuit(20). A switching unit(23) passes and prevents a potential descended by the diode chain(21). A high voltage latch unit(22) controls the switching unit(23) according to the high voltage generated in the positive charge pump circuit(20) and a switching control signal provided from the outside. A load capacitor(C) charges a voltage provided by the diode chain(21). The switching unit(23) is composed using an NMOS transistor. The high voltage latch unit(22) is composed using a level shifter.
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申请公布号 |
KR20000027560(A) |
申请公布日期 |
2000.05.15 |
申请号 |
KR19980045512 |
申请日期 |
1998.10.28 |
申请人 |
HYUNDAI ELECTRONICS IND. CO., LTD. |
发明人 |
LEE, SUNG PHIL |
分类号 |
G11C17/00;(IPC1-7):G11C17/00 |
主分类号 |
G11C17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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