发明名称 CIRCUIT FOR GENERATING MULTI-STEP PULSE IN FLASH MEMORY DEVICE
摘要 PURPOSE: A circuit for generating multi-step pulse in a flash memory device is provided to m a size of a device and to improve a response speed by generating a multi-step pulse using only a simple device. CONSTITUTION: A positive charge pump circuit(20) generates a stable high potential. A diode chain(21) descends a high potential generated in the positive charge pump circuit(20). A switching unit(23) passes and prevents a potential descended by the diode chain(21). A high voltage latch unit(22) controls the switching unit(23) according to the high voltage generated in the positive charge pump circuit(20) and a switching control signal provided from the outside. A load capacitor(C) charges a voltage provided by the diode chain(21). The switching unit(23) is composed using an NMOS transistor. The high voltage latch unit(22) is composed using a level shifter.
申请公布号 KR20000027560(A) 申请公布日期 2000.05.15
申请号 KR19980045512 申请日期 1998.10.28
申请人 HYUNDAI ELECTRONICS IND. CO., LTD. 发明人 LEE, SUNG PHIL
分类号 G11C17/00;(IPC1-7):G11C17/00 主分类号 G11C17/00
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