METHOD FOR FORMING POLYSILICON THIN FILM TRANSISTOR OF LCD

摘要

PURPOSE: A polysilicon TFT(thin film transistor) formation method of LCD(liquid crystal display) is provided to improve a mobility of electric field by forming tapered side walls of source and drain electrodes. CONSTITUTION: A source and a drain electrodes(12,13) spaced apart from each other are formed on an insulating substrate(10) so as to have tapered side walls by taper etching the source and the drain electrodes. An amorphous silicon layer(14) and insulating patterns(15a,15b) are formed. The exposed amorphous silicon layer(14) is implanted and then transferred to a polysilicon layer(14a) by laser annealing. A gate electrode(16) is formed on the insulating patterns(15a,15b). The spaced distance between the source and the drain electrodes(12,13) is positive number times of the laser beam wavelength.