METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of manufacturing a semiconductor device is provided to prevent fluorine ions from penetrating a gate insulating layer in a thermal process for manufacturing a gate electrode and a leakage current. CONSTITUTION: A method of manufacturing a semiconductor device comprises the steps of: forming a gate insulating layer(12) on a semiconductor substrate(11); forming a silicon layer(13) doped with impurities on the gate insulating layer; forming a tungsten silicide layer(14) on the doped polysilicon layer; performing a thermal process of the resulting semiconductor substrate for a predetermined time; and forming a gate electrode by patterning the tungsten silicide layer and the polysilicon layer doped impurities. The thermal process is carried out for 5 to 60 minutes after the temperature of the chamber in which the tungsten silicide layer is formed is elevated in the speed of 50 to 200°C/min until 1000 to 1200°C.