METHOD FOR MANUFACTURING CONTACT OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a contact of a semiconductor device is provided to prevent defects beforehand by simplifying a manufacturing process and securing a process margin. CONSTITUTION: A method for manufacturing a contact of a semiconductor device comprises the steps of: applying a first insulation layer(14) on a semiconductor substrate having a conductive layer pattern, the first insulation layer not being planarized completely; applying a second insulation layer(15) having a different etching rate from that of the first insulation layer, on the entire structure according to the topology of the first insulation layer; forming a residue of the second insulation layer on the side wall of the first insulation layer by etching-back the second insulation layer; and exposing the semiconductor substrate by forming a contact mask pattern and etching the first insulation layer and the residue.