发明名称 CIRCUIT FOR DETECTING ADDRESS TRANSITION
摘要 PURPOSE: A circuit for detecting address transition is provided to decrease a chip size by composing the circuit as one combining circuit unit and one delay circuit unit to a plurality of detecting circuit unit. CONSTITUTION: Output signals of detecting circuits are inputted to a gate of a plurality of PMOS transistors(P11-P1n). A plurality of PMOS transistors(P11-P1n) is connected between a power terminal and an output node(Q11). The power terminal is connected to a gate of a first NMOS transistor(N11). The first NMOS transistor(N11) is connected between the output node(Q11) and a ground terminal(Vss). A resistor(R11) is connected between the first NMOS transistor(N11) and the ground terminal(Vss). An output signal of an inverter(I11) for inverting a potential of a second NMOS transistor(N12) is inputted to a gate of the second NMOS transistor(N12). The second NMOS transistor(N12) is connected between the output node(Q11) and the ground terminal(Vss).
申请公布号 KR20000027268(A) 申请公布日期 2000.05.15
申请号 KR19980045170 申请日期 1998.10.27
申请人 HYUNDAI ELECTRONICS IND. CO., LTD. 发明人 KIM, KWANG HO
分类号 G11C11/407;(IPC1-7):G11C11/407 主分类号 G11C11/407
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