| 摘要 |
PURPOSE: An electricity semiconductor element having the overlapping well area is provided to increase the change ratio of the drain voltage and to control the turn-on by flowing the reverse direction electric current. CONSTITUTION: A device comprises a drift area(110), a semiconductor substrate(100), a first base area(120), a second base area(122), a source area(140), a gate electrode(150), a source electrode, a well area, a first contact(181), a second contact, a first pn diode, a second pn diode, and a bipolar transistor. The source area(140) is formed only in the first base area and not in the second base area. The gate electrode(150) is formed on the first base area which is in between the surface of the drift area and the source area to be electrically connected through the insulating layer. The source electrode is formed to connect with the source area electrically through the first contact at the first base area.
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