| 摘要 |
PURPOSE: A manufacturing method of a semiconductor device is to decrease a phase difference between two gate electrodes, thus improving properties of a dual gate MOS(metal oxide semiconductor). CONSTITUTION: A substrate(31) of the first conductive type is prepared, and a gate insulating layer(32) and a conductive layer are deposited thereon in this order. Impurity ions of the first conductive type are implanted into a portion of the conducive layer where the first gate electrode(33b) is to be formed. Further, impurity ions of the second conductive type are implanted into a portion of the conducive layer where the second gate electrode(33c) is to be formed. The conductive layer is selectively etched so that the portions having impurity ions implanted therein remains, to form the first and the second gate electrodes of a vertical shape, respectively. Thereafter, impurity regions are formed in the substrate at both sides of the first and the second gate electrodes.
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