MANUFACTURING METHOD FOR THIN FLIM ACTUATED MIRROR ARRAY

摘要

PURPOSE: A thin-film micromirror array-actuated(TMA) manufacturing method is provided to prevent a hydrogen fluoride vapor from permeating an active matrix or an active layer through an Iso-Cut part during the etching process of a sacrificial layer, thereby minimizing the damage of the active matrix or the active layer. CONSTITUTION: An Iso-Cut part region of the etch passivation layer(130) is formed by laminating a silicon nitride or an amorphous silicon on an etch stop layer(125) in the thickness of 1.5 to 2.0 micrometer by a plasma enhanced CVD method. The silicon nitride or the amorphous silicon with an excellent etching resistance against hydrogen fluoride vapor is formed by reacting a reaction gas composed of only a nitrous oxide and a silane except for an ammonia. The Iso-Cut part region of the etch passivation layer(130) remains and the etch stop layer(125) is exposed through the etched other region, after the patterning of the etch passivation layer(130) using a mask for covering only the Iso-Cut part region of the etch passivation layer(130). A sacrificial layer(135) is formed on the exposed etch stop layer(125) and the etch passivation layer(130). An air gap is formed in the position of the sacrificial layer(135) by etching the sacrificial layer(135) with the hydrogen fluoride vapor. At this time, the etch passivation layer(130) shields the lower of the Iso-Cut part region.