METHOD FOR FORMING MULTI-LAYER METAL WIRING OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a metal multi-layer metal wiring of a semiconductor device is provided to simplify a manufacturing process by omitting an existing RF etching process before forming a conductive layer. CONSTITUTION: A method for forming a metal multi-layer metal wiring of a semiconductor device comprises the steps of: forming a metal layer on a semiconductor substrate; flattening the metal layer by a chemical-mechanical polishing; and forming a conductive layer on the flattened metal layer. The metal layer is formed with a tungsten. The conductive layer is formed with a titanium or an aluminum. In the process of forming the conductive layer, an existing RF etching process is omitted.